7/12/00 db92493m-aas/a2 0.26 20.32 19.32 4. 0 3. 0 0.5 7.62 13 max 7.0 6.0 2.54 1.2 0.5 3.0 1.2 3.0 4. 0 3. 0 3.35 7.0 6.0 0.5 0.5 7.62 1 2 4 3 0.26 13 max 2.54 10.16 0.26 7.62 3.0 10.1 6 9.16 4. 0 3. 0 3.35 0.5 7.0 6.0 7.62 2 3 4 7 6 5 1.2 13 max 0.5 0.26 2.54 dimensions in mm high density mounting phototransistor optical ly coupled isol ators appro v als l ul recognised, file no. e91231 high isolation v oltage (5.3kv rms ,7.5kv pk ) l all electrical parameters 100% tested l custom electrical selections available applic ations l computer terminals l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances option sm sur face mount option g 3.35 5.08 4.08 1 8 til191, til192, til193 TIL191A, til192a, til193a til191b, til192b, til193b til191 TIL191A til191b til192 til192a til192b til193 til193a til193b 1 2 3 7 8 16 15 10 9 6 11 5 12 14 4 13 isocom components ltd unit 25b, park view road west, park v iew industrial estate, brenda road hartlepool, ts25 1yd england tel: (01429)863609 fax : (01429) 863581 e-mail sales@isocom.co.uk http://ww w .isocom.com 10.46 9.86 0.6 0.1 1.25 0.75
db92493m-aas/a2 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.4 v i f = 20ma reverse voltage (v r ) 5 v i r = 10 m a reverse current (i r ) 10 m a v r = 5v output collector-emitter breakdown (bv ceo ) 35 v i c =0.5ma ( note 2 ) emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark current (i ceo ) 100 na v ce = 24v coupled current transfer ratio (ctr) (note 2) til191, til192, til193 20 % 5ma i f , 5v v ce TIL191A, til192a, til193a 50 % til191b, til192b, til193b 100 % collector-emitter saturation voltagev ce (sat) 0.4 v 5ma i f , 1ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) output rise time tr 6 m s v c c = 5v , output fall time tf 6 m s i c = 2ma, r l = 100 w measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 7/12/00 electrical characteristics ( t a = 25c unless otherwise noted ) absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 125c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 5v power dissipation 70mw output transistor collector-emitter voltage bv ceo 35v emitter-collector voltage bv eco 6v power dissipation 150mw power dissipation total power dissipation 200mw (derate linearly 2.67mw/ c above 25c)
db92493m-aas/a2 7/12/00 50 -30 0 25 50 75 100 125 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature -30 0 25 50 75 100 collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 100 t a = 25c 0 1 2 3 4 5 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 i f = 5ma i c = 1ma forward current i f (ma) collector-emitter saturation voltage vs. forward current collector current vs. collector-emitter voltage collector-emitter voltage v ce ( v ) collector current i c (ma) current transfer ratio vs. forward current forward current i f (ma) current transfer ratio ctr (%) 1 2 5 10 20 50 0 80 120 160 200 240 0 2 4 6 8 10 0 10 20 30 40 50 40 50 30 20 10 15 t a = 25c 280 320 i f = 5ma forward current i f (ma) collector-emitter saturation voltage v ce(sat) (v) ic =1ma 3ma 5ma 10ma 15ma 0 5 10 15 6 v ce = 5v t a = 25c ambient temperature t a ( c )
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